Send til en ven   Udskriv26/10 2009 kl. 11:14
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Ny memory-teknologi med høj power-effektivitet

Rambus demonstrerer ny memoryarkitektur, der kan give en hidtil uset power-effektivitet i mobile applikationer (in english). 

Rambus Inc., one of the world’s premier technology licensing companies specializing in high-speed  memory architectures, today announced it has achieved a new breakthrough
level of power efficiency with its latest silicon test vehicle developed through its Mobile Memory Initiative (MMI).

The latest silicon-validated results demonstrate that through the use of MMI innovations, a high-bandwidth mobile memory controller can achieve a world-leading power efficiency of 2.2mW/Gbps.  This is nearly a one third improvement over the initial MMI silicon and significantly better than the estimated 10mW/Gbps of an LPDDR2 400 memory controller. 
 
Launched in February 2009, Rambus’ MMI focuses on achieving high bandwidth
at extremely low power to enable advanced applications in next-generation
smartphones, netbooks, portable gaming and portable media products.  Operating
at 4.3Gbps, a memory system using MMI innovations can deliver

over 17GB/s of
memory bandwidth from a single mobile DRAM device. 
 
- The performance demands of next-generation mobile devices are vastly outstripping
the pace of battery technology improvements, says Martin Scott, senior vice president
of Research and Technology Development at Rambus. 
- With the innovations developed through our Mobile Memory Initiative, we can deliver advanced applications and maintain long battery life through our breakthroughs in both bandwidth performance and power efficiency.
 
Rambus’ MMI encompasses key innovations based on its renowned signaling and
memory architecture expertise, including Very Low-Swing Differential Signaling,
FlexClocking Architecture, and Advanced Power State Management. In addition,
Rambus’ FlexPhase and Microthreading technologies greatly improve the power
efficiencies of mobile platforms.

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